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Etch process development for FLARETM for dual damascene architecture using a N2/O2 plasma

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11 Author(s)

In this article, the feasibility of via and trench etch of FLARE TM, a low-k organic material product from AlliedSignal Inc. in dual damascene architectures for 0.25 μm applications is described. The effects of O2 concentration and flow rate on the etch rate and the etch profile of FLARETM during etching in oxygen reactive ion etch plasmas have been studied. Best via and trench profiles are obtained for a 25/5 nitrogen-to-oxygen ratio; no undercut of the hard mask is observed at a good etch rate. The feasibility of via filling with a low temperature W process and Cu fill of the trenches in a damascene structure has been demonstrated

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Interconnect Technology, 1999. IEEE International Conference

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