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Fluorine effects on silicidation of BF2+-implanted narrow poly lines

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5 Author(s)
Yap, C.W. ; Dept. of Res. & Dev., Chartered Semicond. Manuf., Singapore ; Soh-Yun Siah ; Lim, E.H. ; Lee, T.K.
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The use of BF2+ for p+ source/drain implant has resulted in void formation in TiSi2 films on p+ poly and diffusion regions due to the interaction between fluorine outdiffusion and Ti silicidation. When using B+ instead of BF2+, no voids were observed. Deposition of a TEOS layer (150 Å) as a fluorine gettering source before p+ activation anneal reduces the number of voids formed considerably. The sheet resistance of the silicided p+ narrow poly has improved substantially with the reduction or elimination of the fluorine-induced effects

Published in:

Interconnect Technology, 1999. IEEE International Conference

Date of Conference:

1999