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Effect of thickness on the dielectric properties of Pb(Mg1/3 Nb2/3)O3 (PMN) thin film prepared by sol-gel method

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5 Author(s)
Wakiya, N. ; Dept. of Inorg. Mater., Tokyo Inst. of Technol., Japan ; Ji-Won Moon ; Kiguchi, Takanori ; Shinozaki, Kazuo
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The dependence of thickness on the dielectric and ferroelectric characteristics were examined for a Pb(Mg1/3Nb2/3)O3 (PMN) thin film prepared by the sol-gel method. The films had stoichiometric composition and epitaxially grown on (100)Pt//(100)MgO substrate. The dielectric constant was decreased with the decrease of thickness, however, the frequency dispersion of the dielectric constant which is characteristic for the relaxor was observed. P-E hysteresis was also observed for the PMN thin film, however, the remanent polarization was much smaller than the value reported for PMN bulk ceramics. These facts imply that the size-effect is also observed for relaxor ferroelectrics

Published in:

Applications of Ferroelectrics, 1998. ISAF 98. Proceedings of the Eleventh IEEE International Symposium on

Date of Conference:

1998