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Dielectric properties of (Ba,Sr)TiO3 thin films deposited on Ni/TiN/Si substrate by photo-assisted metal organic chemical vapor deposition

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4 Author(s)
Chen, Y.M. ; Space Vacuum Epitaxy Center, Houston Univ., TX, USA ; Ritums, D. ; Wu, N.J. ; Ignatiev, A.

High dielectric strontium titanium oxide (STO) and barium strontium titanium oxide (BST) films have been deposited by photo-assisted metal organic chemical vapor deposition (PhAMOCVD) on Si(100) with Ni/TiN metallic buffer layers. The dielectric properties of capacitors based on the Ag/(Ba,Sr)TiO3/Ni/TiN/Si(100) heterostructure exhibited dielectric constants of from 300 to 600. Test structures of 3-D capacitors were fabricated using high permittivity MOCVD (Ba,Sr)TiO3 thin films deposited on the sidewalls of 3-D Ni/TiN electrodes patterned by reactive ion etching

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Applications of Ferroelectrics, 1998. ISAF 98. Proceedings of the Eleventh IEEE International Symposium on

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