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Electron field emission from SiC/Si heterostructures synthesized by carbon implantation using a MEVVA ion source

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8 Author(s)
Dihu Chen ; Dept. of Electron. Eng., Chinese Univ. of Hong Kong, Shatin, Hong Kong ; S. P. Wang ; W. Y. Cheung ; E. Z. Luo
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Planar SiC/Si heterostructures were formed by high dose carbon implantation using a metal vapor vacuum arc ion source. The variations of the field emission properties with the implant dose and annealing conditions were studied. A remarkably low turn-on field of 1 V/μm was observed from a sample implanted at 35 keV to a dose of 1.0×1018 cm-2 with subsequent annealing in nitrogen at 1200°C for 2 h. The chemical composition depth profiles were determined from X-ray photoelectron spectroscopy and the surface morphology was observed by atomic force microscopy. The formation of a thin surface stoichiometric SiC layer and the formation of densely distributed small protrusions on the surface are believed to be the two factors responsible for the efficient electron field emission

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Solid-State and Integrated Circuit Technology, 1998. Proceedings. 1998 5th International Conference on

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