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Electron field emission from SiC/Si heterostructures synthesized by carbon implantation using a MEVVA ion source

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8 Author(s)
Chen, Dihu ; Dept. of Electron. Eng., Chinese Univ. of Hong Kong, Shatin, Hong Kong ; Wang, S.P. ; Cheung, W.Y. ; Luo, E.Z.
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Planar SiC/Si heterostructures were formed by high dose carbon implantation using a metal vapor vacuum arc ion source. The variations of the field emission properties with the implant dose and annealing conditions were studied. A remarkably low turn-on field of 1 V/μm was observed from a sample implanted at 35 keV to a dose of 1.0×1018 cm-2 with subsequent annealing in nitrogen at 1200°C for 2 h. The chemical composition depth profiles were determined from X-ray photoelectron spectroscopy and the surface morphology was observed by atomic force microscopy. The formation of a thin surface stoichiometric SiC layer and the formation of densely distributed small protrusions on the surface are believed to be the two factors responsible for the efficient electron field emission

Published in:

Solid-State and Integrated Circuit Technology, 1998. Proceedings. 1998 5th International Conference on

Date of Conference:

1998