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Reactive ion etching of Si1-xGex alloy with hydrogen bromide

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9 Author(s)
Li Kaicheng ; Nat. Key Lab. of Analog Integrated Circuits, Chongqing, China ; Sun Weifeng ; Wang Qingping ; Zhang Jing
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The reactive ion etching (RIE) of Si1-xGex alloy with hydrogen bromide is described. The technologies of producing Si1-xGex devices are compatible with those of producing silicon devices, which is the major reason why Si1-xGex technologies have been developed so fast in the past few years. One of the key technologies is the etching of Si 1-xGex materials during the production of devices. The materials used were grown by SIVA32 MBE systems under 6.0×10 -10~6.0×10-11 Torr. The experimental results showed that the etch rate of Si1-xGex RIE increased monotonically with increased Ge-content in Si1-xGe x. The higher Ge-content is, the higher the ratio of Si1-xGex etch rate to Si etch rate is. For instance, when x=0.1, the ratio is 1.12; but, when x=0.18, the ratio is 1.35. The RIE rate of Ge epitaxial layers is higher than that of Si1-xGex, and is almost four times as high as that of monocrystalline Si

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Solid-State and Integrated Circuit Technology, 1998. Proceedings. 1998 5th International Conference on

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