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Ultra thin high quality stack nitride/oxide gate dielectrics prepared by in-situ rapid thermal N2O oxidation of NH3 -nitrided Si

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8 Author(s)
Song, S.C. ; Dept. of Electr. & Comput. Eng., Texas Univ., Austin, TX, USA ; Luan, H.F. ; Lee, C.-H. ; Mao, A.Y.
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In this paper, we report ultra thin high quality nitride/oxide gate dielectrics prepared by rapid thermal NH3 nitridation of Si followed by in-situ N2O oxidation (NH3+N2 O process). These films show excellent interface properties, significant lower leakage current (~102×), enhanced reliability, and superior boron diffusion barrier properties compared with SiO2 of identical thickness

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VLSI Technology, Systems, and Applications, 1999. International Symposium on

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