By Topic

Electrically active defects in surface preamorphized and subsequently RTP-annealed Si and the effect of titanium silicidation

Sign In

Cookies must be enabled to login.After enabling cookies , please use refresh or reload or ctrl+f5 on the browser for the login options.

Formats Non-Member Member
$31 $13
Learn how you can qualify for the best price for this item!
Become an IEEE Member or Subscribe to
IEEE Xplore for exclusive pricing!
close button

puzzle piece

IEEE membership options for an individual and IEEE Xplore subscriptions for an organization offer the most affordable access to essential journal articles, conference papers, standards, eBooks, and eLearning courses.

Learn more about:

IEEE membership

IEEE Xplore subscriptions

2 Author(s)
Chi, D.Z. ; Dept. of Eng. Sci., Pennsylvania State Univ., University Park, PA, USA ; Ashok, S.

Thermal evolution of ion implantation-induced defects and the influence of concurrent titanium silicidation in pre-amorphized p-type Si (implanted with 25 keV, 1016 cm-2 Si+) under rapid thermal processing (RTP) have been studied. Ion implantation-induced electrically active defects have been detected by deep level transient spectroscopy (DLTS), capacitance-temperature (C-T), and spreading resistance measurements. DLTS characterization results show that the thermal evolution of electrically active defects in self-ion (Si+) implanted Si depends critically on the post-implantation thermal anneal: Hole traps H1(0.33 eV) and H4(0.47 eV) appear after the highest temperature (950°C) RTP anneal, while a single trap H3(0.26 eV) level shows up at lower anneal temperatures (⩽900°C). The thermal signature of H 4 defect is very similar to that of iron interstitial while those of H1 and H3 levels appear to originate from some interstitial-related defects, possibly complexes. A complete elimination of the above interstitial-related defects with concurrent RTP Ti silicidation has been observed, apparently a result of vacancy injection. The paper will present details of defect evolution under various conditions of RTP for samples with and without the silicidation

Published in:

Solid-State and Integrated Circuit Technology, 1998. Proceedings. 1998 5th International Conference on

Date of Conference:

1998