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Electrically active defects in surface preamorphized and subsequently RTP-annealed Si and the effect of titanium silicidation

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2 Author(s)
Chi, D.Z. ; Dept. of Eng. Sci., Pennsylvania State Univ., University Park, PA, USA ; Ashok, S.

Thermal evolution of ion implantation-induced defects and the influence of concurrent titanium silicidation in pre-amorphized p-type Si (implanted with 25 keV, 1016 cm-2 Si+) under rapid thermal processing (RTP) have been studied. Ion implantation-induced electrically active defects have been detected by deep level transient spectroscopy (DLTS), capacitance-temperature (C-T), and spreading resistance measurements. DLTS characterization results show that the thermal evolution of electrically active defects in self-ion (Si+) implanted Si depends critically on the post-implantation thermal anneal: Hole traps H1(0.33 eV) and H4(0.47 eV) appear after the highest temperature (950°C) RTP anneal, while a single trap H3(0.26 eV) level shows up at lower anneal temperatures (⩽900°C). The thermal signature of H 4 defect is very similar to that of iron interstitial while those of H1 and H3 levels appear to originate from some interstitial-related defects, possibly complexes. A complete elimination of the above interstitial-related defects with concurrent RTP Ti silicidation has been observed, apparently a result of vacancy injection. The paper will present details of defect evolution under various conditions of RTP for samples with and without the silicidation

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Solid-State and Integrated Circuit Technology, 1998. Proceedings. 1998 5th International Conference on

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