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Si/CoSi2/Si(100) heteroepitaxial growth by molecular beam epitaxy and novel solid phase epitaxy

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6 Author(s)
Xin-Ping Qu ; Dept. of Electron. Eng., Fudan Univ., Shanghai, China ; Guo-Ping Ru ; Li, Bing‐Zong ; Jie-Qin
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A new approach to fabricate Si/CoSi2/Si heterostructures is presented. By incorporation of novel solid phase epitaxy with molecular beam epitaxy (MBE), an epitaxial Si/CoSi2 /Si(100) double heterostructure has been grown. With Co/Ti/Si ternary solid state reaction and subsequent surface treatment, a high quality CoSi2 surface is obtained, on which a crystalline Si layer is epitaxially grown by MBE. The double epitaxial heterostructure is confirmed by Rutherford backscattering spectroscopy and transmission electron microscopy measurements

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Solid-State and Integrated Circuit Technology, 1998. Proceedings. 1998 5th International Conference on

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