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Characterisation of low-stress LPCVD silicon nitride in high frequency BJT's with self-aligned metallization

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2 Author(s)
van Zeijl, H.W. ; Inst. for Microelectron. & Submicron Technol., Delft Univ. of Technol., Netherlands ; Nanver, L.K.

In the self-aligned metallization process, a metal base contact is self-aligned to the emitter by using free-standing silicon nitride spacers directly on the silicon. Low-stress silicon nitride (SiNx ) is electrically characterized for use as a spacer material in this process. A comparison is also made to stoichiometric Si3N4 for which mechanical stress related problems can in some cases reduce the device yield. Overall good device characteristics and yield are obtained with the SiNx spacers

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Solid-State and Integrated Circuit Technology, 1998. Proceedings. 1998 5th International Conference on

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