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1.3 μm GaAs-based laser using quantum dots obtained by activated spinodal decomposition

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15 Author(s)
Shernyakov, Yu.M. ; A.F. Ioffe Phys.-Tech. Inst., St. Petersburg, Russia ; Bedarev, D.A. ; Kondrat'eva, E.Yu. ; Kopev, P.S.
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Low threshold current density (Jth=65 A/cm2) operation near 1.3 μm at room temperature (RT) is realised for lasers using InAs-InGaAs-GaAs quantum dots (QDs). The lasing occurs via the QD ground state for cavity length L>1 mm. The differential efficiency is 40% and internal losses are 1.5 cm. The characteristic temperature near RT is 160 K.

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Electronics Letters  (Volume:35 ,  Issue: 11 )