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Biaxially aligned yttria stabilised zirconia (YSZ) buffer layers were deposited on polycrystalline Hastelloy-C substrates using the inclined substrate deposition technique. In-plane aligned, c-axis oriented, YBa/sub 2/Cu/sub 3/O/sub 7-/spl delta// films were then grown onto these buffer layers. Resistively determined irreversibility lines of these films are presented, as well as critical current densities which have been extracted from measurements of E-J characteristics taken at 77.7 K for fields of up to 7 Tesla aligned either parallel or perpendicular to the ab-plane. Data are also presented showing the resistance as a function of the angle between the field and the c-axis. Strong pinning is observed both for fields parallel to the ab-plane (intrinsic pinning), and for fields parallel to the c-axis; the latter being due to either twin or grain boundaries.