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Theoretical and experimental analysis of leakage current in InGaAsP BH lasers with p-n-p-n current blocking layers

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5 Author(s)
Yoshida, Y. ; Opt. & Semicond. Div., Mitsubishi Electr. Corp., Hyogo, Japan ; Watanabe, H. ; Shibata, K. ; Takemoto, A.
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The dependence of the leakage current in 1.3-μm InGaAsP buried heterostructure (BH) lasers with p-n-p-n current blocking layers on well number, mesa width, and carrier density has been analyzed using a two-dimensional device simulator and compared with the electroluminescence (EL) emitted from InP layers. The analysis of the minority carrier flow reveals that the electron current flowing through the p-n-p-n current blocking layers is the dominant component of the leakage current. The measured EL intensity has two peaks at both sides of the n-blocking layer apart from the active layer. The EL intensity decreases with increasing well number and carrier density of the p-blocking layer, and increases with increasing mesa width. These results are consistent with the simulations

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Quantum Electronics, IEEE Journal of  (Volume:35 ,  Issue: 9 )