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Low threshold InGaAsN/GaAs single quantum well lasers grown by molecular beam epitaxy using Sb surfactant

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4 Author(s)
X. Yang ; Dept. of Electr. Eng., Columbia Univ., New York, NY, USA ; M. J. Jurkovic ; J. B. Heroux ; W. I. Wang

Long wavelength InGaAsN/GaAs single quantum well (SQW) laser diodes have been grown by solid source molecular beam epitaxy (MBE) using Sb as a surfactant. A record low threshold current density of 1.47 kA/cm/sup 2/ and a quantum efficiency of 0.11 W/A are reported for broad area laser diodes (LDs) operating at a wavelength of 1.275 /spl mu/m under pulsed operation at room temperature.

Published in:

Electronics Letters  (Volume:35 ,  Issue: 13 )