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Resonant-cavity InGaAs-InAlAs avalanche photodiodes with gain-bandwidth product of 290 GHz

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7 Author(s)
Lenox, C. ; Microelectron. Res. Center, Texas Univ., Austin, TX, USA ; Nie, H. ; Yuan, P. ; Kinsey, G.
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We demonstrated a high-speed, resonant-cavity InGaAs-InAlAs separate absorption, charge, and multiplication avalanche photodiode (APD) operating at a wavelength of 1.55 /spl mu/m. Due to the resonant-cavity scheme, these APDs exhibit high external quantum efficiency (/spl sim/70%) and a high unity-gain bandwidth of 24 GHz. Utilizing the excellent noise characteristics of a thin InAlAs multiplication region (k/spl sim/0.18), we have also achieved a gain-bandwidth product of 290 GHz. These bandwidth results are believed to be the highest reported values for APDs operating at 1.55 /spl mu/m.

Published in:

Photonics Technology Letters, IEEE  (Volume:11 ,  Issue: 9 )

Date of Publication:

Sept. 1999

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