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A total resistance slope-based effective channel mobility extraction method for deep submicrometer CMOS technology

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4 Author(s)
G. Niu ; Dept. of Electr. Eng., Auburn Univ., AL, USA ; J. D. Cressler ; S. J. Mathew ; S. Subbanna

A simple yet effective total resistance slope-based method for extracting the effective channel mobility in deep submicrometer CMOS technology is developed. Using the slope of the measured total resistance versus mask length, the series resistance is removed from the measured total resistance, and mobility is extracted without involving the effective channel length. The new method facilitates mobility extraction in situations where the effective channel length is difficult to extract, such as in lightly-doped-drain (LDD) devices or at low temperatures. The new method also allows the series resistance to be any function of the gate bias, making the mobility extraction in LDD devices easier and more accurate

Published in:

IEEE Transactions on Electron Devices  (Volume:46 ,  Issue: 9 )