By Topic

Improvement of P-channel SOI LDMOS transistor by adapting a new tapered oxide technique

Sign In

Cookies must be enabled to login.After enabling cookies , please use refresh or reload or ctrl+f5 on the browser for the login options.

Formats Non-Member Member
$31 $13
Learn how you can qualify for the best price for this item!
Become an IEEE Member or Subscribe to
IEEE Xplore for exclusive pricing!
close button

puzzle piece

IEEE membership options for an individual and IEEE Xplore subscriptions for an organization offer the most affordable access to essential journal articles, conference papers, standards, eBooks, and eLearning courses.

Learn more about:

IEEE membership

IEEE Xplore subscriptions

6 Author(s)
Kim, Jongdae ; Micro-Electron. Technol. Lab., Electron. & Telecommun. Res. Inst., Taejon, South Korea ; Kim, Sang-Gi ; Song, Q.S. ; Sang Yong Lee
more authors

On-resistance of P-channel REduced SURface Field (RESURF) lateral double-diffused MOS (LDMOS) transistors has been improved by using a new tapered TEOS field oxide on the drift region of the devices. The new tapered oxidation technique provides better uniformity, less than 3%, and reproducibility. With the similar breakdown voltage (VB), at Vgs=-5.0 V, the specific on-resistance (Rsp) of the LDMOS with the tapered field oxide is about 31.5 mΩ·cm 2, while that of the LDMOS with the conventional field oxide is about Rsp=57 mΩ·cm2. The uniformities of Rsp and VB are less than 5 and 3%, respectively

Published in:

Electron Devices, IEEE Transactions on  (Volume:46 ,  Issue: 9 )