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Device characteristics of 0.35 μm P-channel DINOR flash memory using band-to-band tunneling-induced hot electron (BBHE) programming

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9 Author(s)
Ohnakado, T. ; Adv. Technol. R&D Center, Mitsubishi Electr. Corp., Hyogo, Japan ; Onoda, Hiroshi ; Sakamoto, O. ; Hayashi, K.
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The P-channel DINOR flash memory, which uses the band-to-band tunneling induced hot electron (BBHE) program method having the advantages of high scalability, high efficiency, and high oxide reliability, was fabricated by 0.35-μm-rule CMOS process and was investigated in detail. An ultra-high programming throughput of less than 8 ns/byte (=4 μs/512 byte) and a low current consumption of less than 250 μA were achieved by utilizing 512-byte parallel programming. Furthermore, we investigated its endurance characteristics up to 106 program/erase cycles, and window narrowing and Gm degradation were found to be very small even after 106 cycles. It is thought that the BBHE injection point contributes to the G m stability and the oxide-damage-reduced operation contributes to the good window narrowing characteristics. The P-channel DINOR flash memory realizing high programming throughput with low power consumption is one of the strongest candidates for the next generation of high-performance, low-voltage flash memories

Published in:

Electron Devices, IEEE Transactions on  (Volume:46 ,  Issue: 9 )

Date of Publication:

Sep 1999

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