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Reduction of fixed-pattern noise of BASIS due to low kinetic energy reactive ion and native-oxide-free processing

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2 Author(s)
M. Miyawaki ; Dept. of Electron., Tohoku Univ., Sendai, Japan ; T. Ohmi

Reduction of fixed-pattern noise in the base-stored image sensor (BASIS) is achieved with newly developed processes based on ultraclean technology. One is low kinetic-energy reactive ion etching to keep the Si/SiO2 interface free from plasma damage. The dark current decreases down to 0.4 nA/cm2. The other of these processes is native-oxide-free processing to suppress the growth of native oxide on the Si surface. The uniformity of the current gain in a bipolar transistor has been improved with the introduction of these processing methods. These methods improve the Al to n+ region contact, exhibiting low and uniform contact resistance without any thermal annealing treatment

Published in:

IEEE Transactions on Electron Devices  (Volume:38 ,  Issue: 5 )