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We improved the fabrication process of superconductor/semiconductor devices based on epitaxial liftoff (ELO) technology by using polyimide film in place of Apiezon wax. We investigated the process conditions and fabricated basic GaAs devices. We also succeeded in bonding a GaAs Metal-Semiconductor-Metal photodiode on YBCO micro-strip-line that is formed on an SrTiO/sub 3/ substrate. The basic characteristics of this photodiode are measured and the results have confirmed that the ELO process using polyimide film is feasible for fabricating superconductor/semiconductor functional devices.