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Short channel effect in thin-film accumulation-mode p-channel SOI MOSFETs

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3 Author(s)
Smeys, P. ; IMEC vzw, Leuven, Belgium ; Clerix, A. ; Colinge, J.-P.

A short channel effect in thin-film accumulation-mode p-channel SOI MOSFETs is investigated. It is observed that a significant leakage current can flow in a short-channel p+pp+-device when it is turned off. Two dimensional numerical simulations reveal that the nature of this current in short-channel SOI MOSFETs is due to the combination of potential barrier lowering effects caused by the presence of a negative back-gate bias and that of a large drain voltage.

Published in:

Electronics Letters  (Volume:27 ,  Issue: 11 )