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Characterization of thin oxide removal by rapid thermal annealing treatment

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3 Author(s)
Hashim, U. ; Dept. of Electr., Electron. & Syst. Eng., Kebangsaan Malaysia Univ., Bangi, Malaysia ; Shaari, S. ; Majlis, B.Y.

A rapid thermal annealing treatment technique was introduced to remove a thin native oxide on silicon substrates. The native oxide was not present at the silicide/silicon interface after the wafer was thermally treated by RTA at 800°C for 60 seconds in an N2 ambient. This SEM cross-sectional micrograph observation was supported by X-ray diffraction analysis. XRD showed no traceable presence of an oxide peak. Therefore, RTA heat treatment is shown to be a suitable alternative method to remove the native oxide

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Semiconductor Electronics, 1998. Proceedings. ICSE '98. 1998 IEEE International Conference on

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