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MOVPE regrowth of semi-insulating InP around reactive ion etched laser mesas

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4 Author(s)
Nordell, N. ; Swedish Inst. of Microelectron., Kista, Sweden ; Borglind, J. ; Kjebon, O. ; Lourdudoss, S.

Semi-insulating iron doped InP was grown with MOVPE around reactive ion etched laser mesas without using any wet etchant to optimise the mesa shape or to form a mask overhang. To achieve good planarity and selectivity, growth was performed at high temperature and low pressure. The resulting 3 dB modulation bandwidth of the buried heterostructure laser was 7.9 GHz at 10.5 mW.

Published in:

Electronics Letters  (Volume:27 ,  Issue: 11 )