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Novel Si integrated inductor and transformer structures for RF IC design

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4 Author(s)
Koutsoyannopoulos, Y. ; Microelectron. Circuit Design Group, Nat. Tech. Univ. of Athens, Greece ; Papananos, Y. ; Bantas, S. ; Alemanni, C.

Planar and 3D Si passive inductive structures are presented, with respect to their application in RF ICs. The modeling of the structures is realized by the use of a custom CAD tool, SISP. It Is shown how, for the first time, fast answers to complex questions can be obtained before fabrication, such as: inductance boost of up to 600% in three-layer spiral inductors compared to planar ones, with no cost in quality factor; optimization of the insertion and return losses of integrated transformers under area reduction schemes; modeling of practical integrated baluns; effect of physical separation on the crosstalk between inductors. The accuracy of modeling results is established through measurements in an array of fabricated structures

Published in:

Circuits and Systems, 1999. ISCAS '99. Proceedings of the 1999 IEEE International Symposium on  (Volume:2 )

Date of Conference:

Jul 1999