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Characterization of 1/f noise vs. number of gate stripes in MOS transistors

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2 Author(s)
Hsin-Shu Chen ; Harris Semicond., Melbourne, FL, USA ; Ito, A.

This paper examines low-frequency 1/f noise (or Bicker noise) in metal oxide semiconductor field-effect transistors (MOSFETs) versus number of gate stripes and bias conditions. Simulations using SPICE/Spectre with Cadence models have displayed the dependence of 1/f noise on the number of gate stripes and the bias conditions. Experimental results from a test chip designed and fabricated in a 0.5 μm CMOS process show that 1/f noise is independent of the number of gate stripes in both saturation and linear regions for both P-channel and N-channel devices. The measured results have also shown that 1/f noise is independent of the bias conditions in the saturation region but dependent on the bias conditions in the linear region

Published in:

Circuits and Systems, 1999. ISCAS '99. Proceedings of the 1999 IEEE International Symposium on  (Volume:2 )

Date of Conference:

Jul 1999