By Topic

Trap-related gain/phase jump of HFET power amplifiers

Sign In

Cookies must be enabled to login.After enabling cookies , please use refresh or reload or ctrl+f5 on the browser for the login options.

Formats Non-Member Member
$33 $13
Learn how you can qualify for the best price for this item!
Become an IEEE Member or Subscribe to
IEEE Xplore for exclusive pricing!
close button

puzzle piece

IEEE membership options for an individual and IEEE Xplore subscriptions for an organization offer the most affordable access to essential journal articles, conference papers, standards, eBooks, and eLearning courses.

Learn more about:

IEEE membership

IEEE Xplore subscriptions

2 Author(s)
Ce-Jun Wei ; Alpha Ind., Woburn, MA, USA ; J. C. M. Hwang

Using novel characterization techniques, output gain, and phase jumps (with respect to input frequency or input level) of multistage monolithic-microwave integrated-circuit power amplifiers were correlated with heterojunction field-effect transistor (HFET) drain-current kinks and negative gate resistances. Both physical and phenomenological models were used to explain the correlation through hole-trapping and self-biasing mechanisms. A remedy involving bias-stabilization diodes was experimentally verified. Other possible remedies are also discussed. The present conclusion can be extended to other metal-semiconductor field-effect transistor and HFET amplifiers with similar gain/phase jump problems

Published in:

IEEE Transactions on Microwave Theory and Techniques  (Volume:47 ,  Issue: 8 )