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Application of GaInP/GaAs DHBTs to power amplifiers for wireless communications

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9 Author(s)
Pin-Fan Chen ; California Univ., San Diego, La Jolla, CA, USA ; Hsin, U.-M.T. ; Welty, R.J. ; Asbeck, P.M.
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Next-generation power amplifiers must operate at lower supply voltages without sacrificing linearity or efficiency. GaInP/GaAs double-heterojunction bipolar transistors with GaInP collectors can improve over GaAs single-heterojunction bipolar transistors (HBTs) in power-amplifier applications, based on lower offset voltage, increased breakdown electric field, and absence of saturation charge storage. To best exploit these characteristics, amplifier architectures that employ HBTs in switching mode can be used

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Microwave Theory and Techniques, IEEE Transactions on  (Volume:47 ,  Issue: 8 )