Cart (Loading....) | Create Account
Close category search window
 

In0.5(AlxGa1-x)0.5 HEMTs for high-efficiency low-voltage power amplifiers: design, fabrication, and device results

Sign In

Cookies must be enabled to login.After enabling cookies , please use refresh or reload or ctrl+f5 on the browser for the login options.

Formats Non-Member Member
$31 $13
Learn how you can qualify for the best price for this item!
Become an IEEE Member or Subscribe to
IEEE Xplore for exclusive pricing!
close button

puzzle piece

IEEE membership options for an individual and IEEE Xplore subscriptions for an organization offer the most affordable access to essential journal articles, conference papers, standards, eBooks, and eLearning courses.

Learn more about:

IEEE membership

IEEE Xplore subscriptions

10 Author(s)
Yu-Chi Wang ; Lucent Technol., AT&T Bell Labs., Murray Hill, NJ, USA ; Jenn-Ming Kuo ; Ren, Fan ; Lothian, J.R.
more authors

In0.5(AlxGa1-x)0.5 high electron-mobility transistors (HEMTs) are expected to have higher two-dimensional electron gas density and larger current drive capability than both Al0.23Ga0.77As and In0.5Ga 0.5P HEMTs due to the improved conduction-band offsets. In this paper, we performed a systematic investigation of the electrical properties of In0.5(AlxGa1-x)0.5 P (0⩽x⩽1) material system lattice matched to GaAs. By considering the conduction-band offset, direct-to-indirect-band electron transfer, donor-related deep levels, and Schottky barrier height, a relatively narrow range of the Al content 0.2⩽x⩽0.3 was found to be the optimum for the design of In0.5(AlxGa1-x)0.5 HEMTs. Under 1.2-V operation, power transistors with the optimum aluminum composition show high drain current density, high transconductance, and excellent power-added efficiency (65.2% at 850 MHz). These results demonstrate that InAlGaP HEMTs are promising candidates for high-efficiency low-voltage power applications

Published in:

Microwave Theory and Techniques, IEEE Transactions on  (Volume:47 ,  Issue: 8 )

Date of Publication:

Aug 1999

Need Help?


IEEE Advancing Technology for Humanity About IEEE Xplore | Contact | Help | Terms of Use | Nondiscrimination Policy | Site Map | Privacy & Opting Out of Cookies

A not-for-profit organization, IEEE is the world's largest professional association for the advancement of technology.
© Copyright 2014 IEEE - All rights reserved. Use of this web site signifies your agreement to the terms and conditions.