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A novel technique and structure for the measurement of intrinsic stress and Young's modulus of thin films

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2 Author(s)
K. Najafi ; Dept. of Electr. Eng. & Comput. Sci., Michigan Univ., Ann Arbor, MI, USA ; K. Suzuki

A novel technique and test structure to measure the intrinsic stress and Young's modulus on thin films with better than 10% accuracy has been developed. The structure is a doubly supported beam that is driven electrostatically by a capacitive drive electrode in the middle of the beam. The characteristic pull-in voltage of the beam is used to measure the intrinsic stress and Young's modulus of thin films. An intrinsic stress of 1.83×107 Pa and a Young's modulus of 2.2×1011 Pa for heavily boron-doped silicon structures have been measured. The technique can be easily applied to a number of other thin films including polysilicon and silicon nitride. The test structure occupies a small area

Published in:

Micro Electro Mechanical Systems, 1989, Proceedings, An Investigation of Micro Structures, Sensors, Actuators, Machines and Robots. IEEE

Date of Conference:

20-22 Feb 1989