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Nonlinear modeling of a SiGe HBT with applications to ultra low phase noise dielectric resonator oscillators

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8 Author(s)
Regis, M. ; Lab. d'Autom. et d'Anal. des Syst., CNRS, Toulouse, France ; Llopis, O. ; Escotte, L. ; Plana, R.
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We propose a large signal model for a packaged SiGe heterojunction bipolar transistor. Pulsed I-V measurements are used to avoid thermal effects. The current model yields excellent correlation with pulsed output characteristics and S-parameters up to 18 GHz. The model's validity is established by designing ultra low phase noise C and X band dielectric resonator oscillators (DROs).

Published in:

Microwave Symposium Digest, 1999 IEEE MTT-S International  (Volume:1 )

Date of Conference:

13-19 June 1999