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An enhanced on-wafer millimeter-wave noise parameter measurement system

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4 Author(s)
Beland, P. ; Dept. of Electr. Eng., Ottawa Univ., Ont., Canada ; Roy, L. ; Labonte, S. ; Stubbs, Malcolm

A novel on-wafer resistive noise source, useful for noise characterization of microwave devices with the cold noise power measurement technique, is described. The noise source enhances measurement accuracy by providing a calibrated noise temperature directly at the device reference plane. A procedure for determining the excess noise ratio of the noise source is presented and validated up to 40 GHz. The noise source is employed in an on-wafer measurement system, allowing the noise parameters of two-port devices to be extracted. Following a description of the apparatus and measurement procedure, an example of a high-electron-mobility transistor noise parameter measurement at millimeter-wave frequencies is presented

Published in:

Instrumentation and Measurement, IEEE Transactions on  (Volume:48 ,  Issue: 4 )

Date of Publication:

Aug 1999

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