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HBT optoelectronic mixer at microwave frequencies: modeling and experimental characterization

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7 Author(s)
J. Lasri ; Dept. of Electr. Eng., Technion-Israel Inst. of Technol., Haifa, Israel ; Y. Betser ; V. Sidorov ; S. Cohen
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A heterojunction bipolar transistor (HBT) optoelectronic mixer was studied experimentally and theoretically. A detailed large signal π-model and a small signal analysis are described. The frequency dependence of down and up conversion has been analyzed and measured. In terms of conversion gain, the advantage of the down conversion process is clearly demonstrated. The values of parameters employed in the mixing process are also discussed for both large and small signal regimes

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Journal of Lightwave Technology  (Volume:17 ,  Issue: 8 )