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A three-layer 3D silicon system using through-Si vertical optical interconnections and Si CMOS hybrid building blocks

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12 Author(s)
Bond, S.W. ; Lawrence Livermore Nat. Lab., CA, USA ; Vendier, Olivier ; Myunghee Lee ; Sungying Jung
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We present for the first time a three-dimensional (3D) Si CMOS interconnection system consisting of three layers of optically interconnected hybrid integrated Si CMOS transceivers. The transceivers were fabricated using 0.8-μm digital Si CMOS foundry circuits and were integrated with long wavelength InP-based emitters and detectors for through-Si vertical optical interconnections. The optical transmitter operated with a digital input and optical output with operation speeds up to 155 Mb/s. The optical receiver operated with an external optical input and a digital output up to 155 Mb/s. The transceivers were stacked to form 3D through-Si vertical optical interconnections and a fabricated three layer stack demonstrated optical interconnections between the three layers with operational speed of 1 Mb/s and bit-error rate of 10-9

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Selected Topics in Quantum Electronics, IEEE Journal of  (Volume:5 ,  Issue: 2 )