By Topic

Control of cleaning performance of an ammonia and hydrogen peroxide mixture (APM) on the basis of a kinetic reaction model

Sign In

Cookies must be enabled to login.After enabling cookies , please use refresh or reload or ctrl+f5 on the browser for the login options.

Formats Non-Member Member
$33 $13
Learn how you can qualify for the best price for this item!
Become an IEEE Member or Subscribe to
IEEE Xplore for exclusive pricing!
close button

puzzle piece

IEEE membership options for an individual and IEEE Xplore subscriptions for an organization offer the most affordable access to essential journal articles, conference papers, standards, eBooks, and eLearning courses.

Learn more about:

IEEE membership

IEEE Xplore subscriptions

3 Author(s)
K. Yamamoto ; Resources & Environ. Protection Res. Lab., NEC Corp., Kanagawa, Japan ; A. Nakamura ; U. Hase

Ammonia and hydrogen peroxide mixtures (APM) are widely used for removing particles from substrate surfaces in semiconductor manufacturing. In the next-generation manufacturing, more precise control of the APM cleaning performance is required than what is available today. In this study, a new method for evaluating the APM cleaning performance, such as the etching rate, surface microroughness, and particle removal efficiency, was introduced based on a chemical equilibrium analysis of APM and a kinetic reaction model of a Si substrate with APM. It became clear that the etching reaction of a Si substrate proceeds along two paths (path-1, path-2) in APM. In path-1, the Si surface is oxidized by HO2- and then the SiO2 layer is etched by OH-. In path-2, the Si surface is directly etched by OH-. Path-1 is favorable for APM cleaning because path-2 causes some problems, such as too fast etching, an increase in surface microroughness, and a decrease in particle removal efficiency. Using the contribution ratio of each path to total etching reaction, we can predict the etching rate and determine optimum APM cleaning conditions (NH3 concentration, H2 O2 concentration, temperature). This method makes it possible to improve the APM cleaning performance and to decrease chemical consumption

Published in:

IEEE Transactions on Semiconductor Manufacturing  (Volume:12 ,  Issue: 3 )