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Control of cleaning performance of an ammonia and hydrogen peroxide mixture (APM) on the basis of a kinetic reaction model

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3 Author(s)
Yamamoto, K. ; Resources & Environ. Protection Res. Lab., NEC Corp., Kanagawa, Japan ; Nakamura, A. ; Hase, U.

Ammonia and hydrogen peroxide mixtures (APM) are widely used for removing particles from substrate surfaces in semiconductor manufacturing. In the next-generation manufacturing, more precise control of the APM cleaning performance is required than what is available today. In this study, a new method for evaluating the APM cleaning performance, such as the etching rate, surface microroughness, and particle removal efficiency, was introduced based on a chemical equilibrium analysis of APM and a kinetic reaction model of a Si substrate with APM. It became clear that the etching reaction of a Si substrate proceeds along two paths (path-1, path-2) in APM. In path-1, the Si surface is oxidized by HO2- and then the SiO2 layer is etched by OH-. In path-2, the Si surface is directly etched by OH-. Path-1 is favorable for APM cleaning because path-2 causes some problems, such as too fast etching, an increase in surface microroughness, and a decrease in particle removal efficiency. Using the contribution ratio of each path to total etching reaction, we can predict the etching rate and determine optimum APM cleaning conditions (NH3 concentration, H2 O2 concentration, temperature). This method makes it possible to improve the APM cleaning performance and to decrease chemical consumption

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Semiconductor Manufacturing, IEEE Transactions on  (Volume:12 ,  Issue: 3 )