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We have proposed and successfully demonstrated a novel process for fabricating lightly doped drain (LDD) polycrystalline silicon thin-film transistors (TFT's). The oxide sidewall spacer in the new process is formed by a simple one-step selective liquid phase deposition (LPD) oxide performed at 23/spl deg/C. Devices fabricated with the new process exhibit a lower leakage current and a better ON/OFF current ratio than non-LDD control devices. Since the apparatus used for LPD oxide deposition is simple and inexpensive, the new process appears to be quite promising for future high-performance poly-Si TFT fabrication.