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Wireless communication integrated circuits with CMOS-compatible SiGe HBT technology modules

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10 Author(s)
W. Winkler ; Inst. for Semicond. Phys., Frankfurt, Germany ; J. Borngraber ; He. Erzgraber ; Ha. Erzgraber
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Despite rapid progress in the field of RF CMOS, there is a growing interest in SiGe bipolar technology for RF and high speed applications. We have developed a 0.8 μm SiGe HBT technology with ft/f max of 45/50 GHz (standard version for prototyping foundry operations) and an advanced SiGe:C technology with ft/fmax of 50/90 GHz (experimental status). These technologies are low cost modules that allow integration into existing CMOS technologies with less than five additional masks. Further, a low parasitics module is introduced. In the first part of this paper, the technology of the modules is described. In the second part the devices for the design of RF circuits are presented. The spectrum of devices includes: bipolar transistors, polysilicon resistors, MIM capacitances, inductors and varicaps. In the third part circuit results are presented. They include ring oscillators, VCOs, an LNA and a divider for RF applications in the GHz range

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Custom Integrated Circuits, 1999. Proceedings of the IEEE 1999

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