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High-power narrow-band terahertz generation using large-aperture photoconductors

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6 Author(s)
Sang-Gyu Park ; Sch. of Electr. & Comput. Eng., Purdue Univ., West Lafayette, IN, USA ; Weiner, A.M. ; Melloch, M.R. ; Sider, C.W.
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Large-aperture biased photoconductive emitters which can generate high-power narrow-band terahertz (THz) radiation are developed. These emitters avoid saturation at high fluence excitation and achieve enhanced peak power spectral density by employing a thick layer of short-lifetime low-temperature-grown GaAs (LT-GaAs) photoconductor and multiple-pulse excitation. THz waveforms are calculated from the saturation theory of large aperture photoconductors, and a comparison is made between theory and measurement. A direct comparison of the multiple-pulse saturation properties of THz emission from semi-insulating GaAs and LT GaAs emitters reveals a strong dependence on the carrier lifetime. In particular, the data demonstrate that saturation is avoided only when the interpulse spacing is longer than the carrier lifetime

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Quantum Electronics, IEEE Journal of  (Volume:35 ,  Issue: 8 )