An analytical model for interaction of SIPOS layer with underlying silicon of SOI RESURF devices

An analytical model for interaction of semi-insulating polycrystalline silicon (SIPOS) layer with underlying silicon of SOI RESURF devices is presented which allows a clear picture of the potentials in the two regions coupled through the device parameters including the interface oxide thickness between the regions. The improvement in the breakdown voltage due to the presence of SIPOS layer is demonstrated, numerical simulations are shown to support the analytical model.