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Two-dimensional doping profile characterization of MOSFETs by inverse modeling using I-V characteristics in the subthreshold region

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3 Author(s)
Z. K. Lee ; Dept. of Electr. Eng. & Comput. Sci., MIT, Cambridge, MA, USA ; M. B. McIlrath ; D. A. Antoniadis

In this paper, we present a new technique for the characterization of two-dimensional (2-D) doping profiles in deep submicron MOSFETs using current-voltage (I-V) characteristics in the subthreshold region. The main advantages of the technique are as follows. (1) It is capable of extracting 2-D doping profile (including channel-length) of deep submicron devices because of its immunity to parasitic resistance, capacitance, noise, and fringing electric fields. (2) It does not require any special test structures since only subthreshold I-V data are used. (3) It is nondestructive. (4) It has very little dependence on mobility and mobility models. (5) It is easy to use since data collection and preparation are straightforward. (6) It can be extended to the accurate calibration of mobility and mobility models using I-V characteristics at high current levels, because errors associated with uncertainties in doping profiles are removed

Published in:

IEEE Transactions on Electron Devices  (Volume:46 ,  Issue: 8 )