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Browse Journals & Magazines > Electron Devices, IEEE Transa ...> Volume:46 Issue:8 Help

High-temperature, low threshold current, and uniform operation 1×12 monolithic AlGaInAs/InP strain-compensated multiple quantum well laser array in 1.5 μm

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4 Author(s)
Lin, Chia-Chien ; Chunghwa Telecom Co. Ltd., Taoyuan, Taiwan ; Meng-Chyi Wu ; Hung-Ping Shiao ; Liu, Kuo‐Shung

In this paper, we describe the fabrication of a monolithically integrated 1×12 array of 1.5-μm AlGaInAs/InP strain-compensated multiple-quantum-well (MQW) lasers, which has high reliability and highly uniform characteristics in low threshold current, slope efficiency, and lasing wavelength. Besides, each diode on the array exhibits a high characteristic temperature of 88 K and a low slope-efficiency drop of less than 1 dB between 20-80°C and a lasing wavelength of 1510 nm at 20°C and 20 mA. Also, the diode on the array has a maximum resonance frequency of above 8 GHz or 3-dB modulation bandwidth of 12 GHz

Published in:
Electron Devices, IEEE Transactions on  (Volume:46 ,  Issue: 8 )

Date of Publication: Aug 1999

Page(s):
1614 - 1618
ISSN :
0018-9383
INSPEC Accession Number:
6327788
Digital Object Identifier :
10.1109/16.777148
Product Type:
Journals & Magazines
Date of Current Version :
06 August 2002
Issue Date :
Aug 1999
Sponsored by :
IEEE Electron Devices Society

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