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Direct-signal modulation using a silicon microstrip patch antenna

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2 Author(s)
V. F. Fusco ; Dept. of Electr. & Electron. Eng., Queen's Univ., Belfast, UK ; Qiang Chen

In this paper, a microstrip patch antenna is fabricated directly onto a high-resistivity silicon substrate without an insulating barrier, thereby forming a distributed Schottky diode between the patch radiator metallization and ground plane. By applying d.c. bias control to the patch metallization, direct amplitude modulation of a CW microwave carrier can be achieved. Experimental results are presented that show the far-field radiation characteristics of the structure and its response to applied base-band modulation signals. Also direct base-band signal detection using the patch antenna is discussed

Published in:

IEEE Transactions on Antennas and Propagation  (Volume:47 ,  Issue: 6 )