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Optimization of word-line booster circuits for low-voltage flash memories

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2 Author(s)
Tanzawa, T. ; Microelectron. Eng. Lab., Toshiba Corp., Yokohama, Japan ; Atsumi, S.

Two word-line booster circuits, which output a word-line voltage for reading dash memory data, are analyzed and optimized. A capacitor-switched booster circuit outputs a voltage higher than the supply voltage by switching the connection state of one of more boosting capacitors with the load capacitor from parallel to series. The optimum number of capacitors and capacitance per boosting capacitor are obtained as a function of the voltage ratio of the required high voltage to the supply voltage. The operation current consumed by the boosting operation is also analytically derived. In addition, another booster circuit-Dickson charge-pump circuit-is optimized under the condition to maximize the output current at a high word-line voltage. Characteristics of the booster circuits are compared, and the selection of booster circuit for low-voltage flash memory is discussed

Published in:

Solid-State Circuits, IEEE Journal of  (Volume:34 ,  Issue: 8 )

Date of Publication:

Aug 1999

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