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We demonstrate high-performance InGaAsPN quantum well based long-wavelength lasers grown on GaAs substrates, nitrogen containing lasers emitting in the /spl lambda/=1.2- to 1.3-/spl mu/m wavelength range were grown by gas source molecular beam epitaxy using a RF plasma nitrogen source. Under pulsed excitation, lasers emitting at /spl lambda/=1.295 /spl mu/m exhibited a record low threshold current density (J/sub TH/) of 2. 5 kA/cm/sup 2/. Lasers grown with less nitrogen in the quantum well exhibited significantly lower threshold current densities of J/sub TH/=1.9 kA/cm/sup 2/ at /spl lambda/=1.27 /spl mu/m and J/sub TH/=1.27 kA/cm/sup 2/ at /spl lambda/=1.2 /spl mu/m. We also report a slope efficiency of 0.4 W/A and an output power of 450 mW under pulsed operation for nitrogen containing lasers emitting at 1.2 /spl mu/m.