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1.3-μm AlGaInAs buried-heterostructure lasers

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4 Author(s)
Takemasa, K. ; Opto-Electron. Labs., Oki Electr. Ind. Co. Ltd., Tokyo, Japan ; Kubota, M. ; Munakata, T. ; Wada, H.

1.3-μm AlGaInAs-InP strained multiple-quantumwell (MQW) buried-heterostructure (BH) lasers have been successfully fabricated. InP current blocking layers could be smoothly regrown using the simple HF pretreatment, although the etched active region includes Al-containing layers. The threshold current I/sub th/ was typically 11 mA for as-cleaved 350-μm-long devices, which is about 30% lower than that of the ridge laser counterparts. A maximum continuous-wave operating temperature as high as 155/spl deg/C was achieved. For the 200-μm-long device with the high-reflective-coated rear-facet, I/sub th/ was as low as 7.5 mA and characteristic temperature T0 was 80 K. The BH lasers also provided more circular far-field patterns and lower thermal resistances than for ridge lasers.

Published in:

Photonics Technology Letters, IEEE  (Volume:11 ,  Issue: 8 )