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Response of silicon semiconductor detector to low-energy ions

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3 Author(s)
F. Sato ; Dept. of Electron. Inf. Syst. & Energy Eng., Osaka Univ., Japan ; T. Tanaka ; T. Iida

The response of a silicon surface barrier detector to low-energy ions below 40 keV were measured utilizing a single ion irradiation system. Data on pulse-height response to H+, He+ and Ar+ in the low-energy region were precisely obtained with a typical energy spectroscopy system and an averaging method with a digital oscilloscope. The experimental data agreed generally with results calculated by the computer simulation code for ion transportation, MARLOWE

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Nuclear Science Symposium, 1998. Conference Record. 1998 IEEE  (Volume:2 )

Date of Conference: