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Realisation of SI-BH lasers buried by selective LP-MOVPE regrowth under conventional conditions using TBP

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3 Author(s)
Sik, H. ; Groupement d''Interet Econ., OPTO+, Marcoussis, France ; Bouchoule, S. ; Slempkes, S.

Selective planar regrowth of high resistivity (as high as 109 Ω.cm) Fe-doped semi-insulating InP epitaxial layers has been studied to fabricate current confining layers for buried heterostructure lasers. The epitaxial layers were grown with conventional growth conditions on patterned, nonplanar heterostructure mesa by low-pressure organometallic vapor phase epitaxy (LP-MOVPE) with tertiarybutylphosphine (TBP), trimethylindium (TMI) and iron dicyclopentadienyl (Fe(C5H5)2) as the reactant gases. This selective growth has been developed around laser stripes designed without overhang of the selective growth mask. And shows very good static characteristics of the SI-BH lasers as compared to standard BRS laser structures

Published in:
Indium Phosphide and Related Materials, 1999. IPRM. 1999 Eleventh International Conference on

Date of Conference: 1999

Page(s):
547 - 550
Meeting Date :
16 May 1999-20 May 1999
ISSN :
1092-8669
Print ISBN:
0-7803-5562-8
INSPEC Accession Number:
6482498
Conference Location :
Davos
Digital Object Identifier :
10.1109/ICIPRM.1999.773753
Product Type:
Conference Publications

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