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InP-based high speed digital logic gates using an RTD/HBT heterostructure

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6 Author(s)
Lin, C.-H. ; Dept. of Electr. Eng. & Comput. Sci., Michigan Univ., Ann Arbor, MI, USA ; Yang, K. ; Gonzalez, A.F. ; East, J.R.
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In this paper we report on the design, fabrication, and measurement of InP-based high-speed monolithically integrated static inverter and consensus element. These logic gates were implemented using an MBE-grown stacked-layer epitaxial heterostructure of a resonant-tunneling-diode (RTD) and heterojunction-bipolar-transistor (HBT), the fabricated RTDs showed a peak-to-valley current ratio of 10 at room temperature and the HBT's demonstrated a current gain of 68 and a cutoff frequency (fT) of 50 GHz. The logic functions of these two fabricated circuits were confirmed up to 6 Gb/s

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Indium Phosphide and Related Materials, 1999. IPRM. 1999 Eleventh International Conference on

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