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A 2.0 μm cutoff wavelength separate absorption, charge, and multiplication layer avalanche photodiode using strain-compensated InGaAs quantum wells

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4 Author(s)
Dries, J.C. ; Dept. of Electr. Eng., Princeton Univ., NJ, USA ; Gokhale, M.R. ; Forrest, S.R. ; Olsen, G.H.

We report an avalanche photodiode structure for use at wavelengths as long as 2.1 μm. Light is absorbed in a 100 period structure consisting of In0.83Ga0.17As quantum wells strain-compensated by In0.83Ga0.17P barrier layers. Photogenerated electrons are injected into a high electric field In0.52Al0.48As (ionization rate ratio=0.2) gain region initiating low noise avalanche multiplication. Primary dark currents of ~5 nA and responsivities of 45 A/W at a wavelength of 1.93 μm are observed

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Indium Phosphide and Related Materials, 1999. IPRM. 1999 Eleventh International Conference on

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