Scheduled System Maintenance:
On Wednesday, July 29th, IEEE Xplore will undergo scheduled maintenance from 7:00-9:00 AM ET (11:00-13:00 UTC). During this time there may be intermittent impact on performance. We apologize for any inconvenience.
By Topic

A 2.0 μm cutoff wavelength separate absorption, charge, and multiplication layer avalanche photodiode using strain-compensated InGaAs quantum wells

Sign In

Cookies must be enabled to login.After enabling cookies , please use refresh or reload or ctrl+f5 on the browser for the login options.

Formats Non-Member Member
$31 $13
Learn how you can qualify for the best price for this item!
Become an IEEE Member or Subscribe to
IEEE Xplore for exclusive pricing!
close button

puzzle piece

IEEE membership options for an individual and IEEE Xplore subscriptions for an organization offer the most affordable access to essential journal articles, conference papers, standards, eBooks, and eLearning courses.

Learn more about:

IEEE membership

IEEE Xplore subscriptions

4 Author(s)
Dries, J.C. ; Dept. of Electr. Eng., Princeton Univ., NJ, USA ; Gokhale, M.R. ; Forrest, S.R. ; Olsen, G.H.

We report an avalanche photodiode structure for use at wavelengths as long as 2.1 μm. Light is absorbed in a 100 period structure consisting of In0.83Ga0.17As quantum wells strain-compensated by In0.83Ga0.17P barrier layers. Photogenerated electrons are injected into a high electric field In0.52Al0.48As (ionization rate ratio=0.2) gain region initiating low noise avalanche multiplication. Primary dark currents of ~5 nA and responsivities of 45 A/W at a wavelength of 1.93 μm are observed

Published in:

Indium Phosphide and Related Materials, 1999. IPRM. 1999 Eleventh International Conference on

Date of Conference: