By Topic

Integration of optical amplifiers and passive waveguide devices on InP using selective area chemical beam epitaxy

Sign In

Cookies must be enabled to login.After enabling cookies , please use refresh or reload or ctrl+f5 on the browser for the login options.

Formats Non-Member Member
$33 $13
Learn how you can qualify for the best price for this item!
Become an IEEE Member or Subscribe to
IEEE Xplore for exclusive pricing!
close button

puzzle piece

IEEE membership options for an individual and IEEE Xplore subscriptions for an organization offer the most affordable access to essential journal articles, conference papers, standards, eBooks, and eLearning courses.

Learn more about:

IEEE membership

IEEE Xplore subscriptions

6 Author(s)
Harmsma, P.J. ; COBRA Inter-Univ. Res. Inst., Delft, Netherlands ; Leys, M.R. ; Verschuren, C.A. ; Vonk, H.
more authors

High quality butt joints were fabricated in the InGaAsP system using a Selective Area Chemical Beam Epitaxy (SA-CBE) regrowth step. Coupling losses were as low as 0.1 dB/interface for butt joints between similar transparent layer stacks. Active and passive regions were defined on a single chip using SA-CBE. Semiconductor optical amplifiers (SOAs) and transparent waveguides were fabricated in their appropriate regions. Extended cavity lasers, consisting of SOAs with passive waveguides on both sides, showed stable CW laser operation at a wavelength of 1.56 μm. SA-CBE offers maximum design flexibility, since each device can be fabricated in its own optimized layer stack

Published in:

Indium Phosphide and Related Materials, 1999. IPRM. 1999 Eleventh International Conference on

Date of Conference: